| PART |
Description |
Maker |
| M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS |
18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
|
GSI Technology, Inc.
|
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| DDR110-56T7RL DDR110-XXT7RL DDR110-27T7RL |
10-LINE 56 ohm OTHER TERMINATOR, PDSO24
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH 双倍数据速率终端网络具有禁用开
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| ADD8608A8A-75BA ADD8608A8A ADD8608A8A-75B |
Double Data Rate SDRAM
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| MT46V2M32V1 MT46V2M32LG |
DOUBLE DATA RATE DDR SDRAM
|
MICRON[Micron Technology]
|
| MT46V32M16TG-75 MT46V32M16TG-75L MT46V32M16TG-75Z |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
